Essay代写 ：硅晶体生长与晶圆技术研究分析
本文讨论了半导体硅晶圆技术的历史发展，包括晶圆和大块晶体生长的最新进展。进一步的讨论集中在更好地理解CMOS当前功能的技术上。
本文认为硅衬底是建立模型微电子学基础的基础(Buonassisi, 2016)。虽然硅片技术的最初50年主要是由工业微电子技术驱动的，但光伏技术的应用一直在推动硅片技术的新进步。本研究通过回顾该技术的过去发展和演变，进一步突出了晶圆技术和大块晶体生长方面的最新技术进展，反映了其有效性。
Essay代写 ：硅晶体生长与晶圆技术研究分析
对于具有较小通道长度的MOSFET晶体管，预期需要使用非硅通道材料来维持性能伸缩。如本研究所述，介绍具有高载流子迁移率的复合半导体通道材料时，将给出具体的点。这些材料可以是Ge、InSb或InGaAs。目前的集成方案似乎更多地关注于跨复杂层的选择性外延生长。这将特别发生在制造用于缓解与硅基体晶格失配问题的器件时。晶体管的性能缩放可能最终导致跨硅碳纳米管晶体管。这是随后制造的，以提供一个有前途的行为晶体管缩放。
Essay代写：硅晶体生长与晶圆技术研究分析
This article discusses on the historical establishment of wafer technology with semiconductor silicon that include the recent advancements of wafering and growth in bulk crystals. Further discussion focuses on technologies for better understanding the current capabilities of CMOS.
It is well acknowledged in the article that silicon substrates are responsible for establishing the fundamental base of model microelectronics (Buonassisi, 2016). While the initial 50 years for technology of silicon wafer were driven primarily by the industry microelectronics, the application of photovoltaics has been driving the new advancements in technology of silicon wafer. The research reflects its effectiveness by reviewing the past development and evolution of this technology by further highlighting the latest technical advancements in wafering technologies and bulk crystal growth .
Essay代写：硅晶体生长与晶圆技术研究分析
For transistors of MOSFET having small lengths of channel, there is an anticipation of requiring non silicon channel materials for the maintenance of performance scaling . As mentioned in the research, specific point will be represented for introducing channel materials of compound semiconductor with high carrier mobility. These materials can be Ge, InSb, or InGaAs. Current schemes of integration appear to focus more upon selectively growing epitaxial across complex stacks of layer. This will specifically take place while fabricating the device engineered for mitigation of lattice mismatch problems with the substrate of silicon . The performance scaling of transistor may finally result in transistors of carbon nanotube across silicon. This is fabricated subsequently to deliver a promising behavior of transistor scaling .
